Temperature dependence of reverse-bias leakage current in GaN Schottky diodes as a consequence of phonon-assisted tunneling

Journal of Applied Physics

Volumn 99, Issue 9, 2006, Pages

  Pipinys, P ^a   Lapeika, V ^a  

^a VYTAUTAS MAGNUS UNIVERSITY   (Lithuania)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TUNNELING; GALLIUM NITRIDE; MATHEMATICAL MODELS; PHONONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS;

METAL-SEMICONDUCTOR INTERFACE; PHONON-ASSISTED TUNNELING; TEMPERATURE DEPENDENCE;

LEAKAGE CURRENTS;

EID: 33646857740     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2199980     Document Type: Article

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