Localised defect-induced Schottky barrier lowering in n-GaN Schottky diodes

Solid-State Electronics

Volumn 52, Issue 2, 2008, Pages 171-174

  Parish, G ^a   Kennedy, R A ^a   Umana Membreno, G A ^a   Nener, B D ^a  

^a UNIVERSITY OF WESTERN AUSTRALIA   (Australia)

Author keywords

Barrier lowering; Defects; Gallium nitride; I V; Leakage; Schottky barrier

Indexed keywords

EID: 38049095037     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.09.005     Document Type: Letter

References (18)

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