Temperature dependent characteristics of bulk GaN Schottky rectifiers on free-standing GaN substrates

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 2, 2004, Pages 710-714

  Kang, B S ^a   Ren, F ^a   Irokawa, Y ^b   Baik, K W ^a   Pearton, S J ^a   Pan, C C ^c   Chen, G T ^c   Chyi, J I ^c   Ko, H J ^d   Lee, H Y ^d  

^a University of Florida   (United States)

^b Rd Management Section   (Japan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^d Samsung Corning Co Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; DIELECTRIC MATERIALS; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRIC RESISTANCE; GALLIUM NITRIDE; IMPACT IONIZATION; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; VAPOR PHASE EPITAXY;

HYDRIDE VAPOR PHASE EPITAXY (HVPE); ON-STATE RESISTANCES; POWER CONDITIONING; SCHOTTKY RECTIFIERS;

ELECTRIC RECTIFIERS;

EID: 2442438716     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1689303     Document Type: Article

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