Thermal stability of metallizations on GaN/AlxGa 1-xN/GaN heterostructures

Semiconductor Science and Technology

Volumn 20, Issue 5, 2005, Pages 389-397

  Readinger, E D ^a   Robinson, J A ^a   Mohney, S E ^a   Therrien, R ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b NITRONEX CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGING OF MATERIALS; CURRENT DENSITY; DISSOLUTION; HETEROJUNCTIONS; METALLIZING; OHMIC CONTACTS; RAPID THERMAL ANNEALING; THERMODYNAMIC STABILITY;

ACCELERATED AGEING; LONG-TERM ANNEALING; METAL WORK FUNCTIONS; METALLIZATIONS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 24144454645     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/20/5/011     Document Type: Article

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