Origin of power fluctuations in GaN resonant-cavity light-emitting diodes

Optics Express

Volumn 12, Issue 5, 2004, Pages 736-741

  Roycroft, Brendan ^a   Akhter, Mahbub ^a   Maaskant, Pleun ^a   Corbett, Brian ^a   Shaw, Alan ^b   Bradley, Louise ^b   De Mierry, Phillipe ^c   Poisson, Marie Antoinette ^d  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b TRINITY COLLEGE DUBLIN   (Ireland)

^c CNRS   (France)

^d THALES RESEARCH AND TECHNOLOGY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DATA COMMUNICATION SYSTEMS; ELECTRIC CURRENT CARRYING CAPACITY (CABLES); EPITAXIAL GROWTH; IMAGE ANALYSIS; LASERS; METALLIZING; NATURAL FREQUENCIES; RESONANCE; SEMICONDUCTING GALLIUM COMPOUNDS;

LASER MATERIALS; POWER FLUCTUATIONS; RESONANT-CAVITY LIGHT-EMITTING DIODES (RCLED);

LIGHT EMITTING DIODES;

EID: 2942731712     PISSN: 10944087     EISSN: None     Source Type: Journal    
DOI: 10.1364/OPEX.12.000736     Document Type: Article

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