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Journal of Chemical Physics

Volumn 129, Issue 3, 2008, Pages

Change in the interfacial reaction of Hf-silicate film as a function of thickness and stoichiometry

(8) Cho, M H a Kim, C Y a Moon, K a Chung, K B b Yim, C J a Ko, D H a Sohn, H C a Jeon, Hyeongtag c

a Yonsei University (South Korea)

b NORTH CAROLINA STATE UNIVERSITY (United States)

c Hanyang University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HAFNIUM; HAFNIUM COMPOUNDS; HIGH RESOLUTION ELECTRON MICROSCOPY; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAGNETIC FILMS; NONMETALS; OXYGEN; PHASE INTERFACES; PHASE SEPARATION; SEPARATION; SILICATES; SILICON; STOICHIOMETRY; SURFACE DIFFUSION;

AMERICAN INSTITUTE OF PHYSICS (AIP); COMPRESSIVE STRAINS; HF SILICATES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY (HR-TEM); INTERFACIAL REACTIONS; MEDIUM-ENERGY ION SCATTERING (MEIS); MOLE FRACTIONS; OXYGEN IMPURITIES; POST ANNEALING PROCESSING; SEPARATION PHENOMENON; SI(2 1 1) SUBSTRATES; SILICATE FILMS;

INTERFACIAL ENERGY;

EID: 47849133274 PISSN: 00219606 EISSN: None Source Type: Journal
DOI: 10.1063/1.2955461 Document Type: Article

Times cited : (5)

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