Structure of hafnium silicate films formed by atomic layer deposition

ECS Transactions

Volumn 25, Issue 6, 2009, Pages 163-172

  Liu, J ^a   Wu, X ^b   Lennard, W N ^a   Landheer, D ^b  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

^b NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; GATE DIELECTRICS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; LOW-K DIELECTRIC; MOLECULAR ORBITALS; SILICA; SILICATES; SILICON; SPINODAL DECOMPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY;

ANGLE-RESOLVED X-RAY PHOTOELECTRON SPECTROSCOPY; FILM SURFACES; HAFNIUM SILICATE FILMS; LAYERED STRUCTURES; MEDIUM ENERGY ION SCATTERING; NON-UNIFORM DISTRIBUTION; PSEUDO-BINARIES; SURFACE-DIRECTED SPINODAL DECOMPOSITION;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 76549113080     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3206616     Document Type: Conference Paper

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