Correlation of defect profiles with carrier profiles of InAs epilayers on GaP

Applied Physics Letters

Volumn 78, Issue 7, 2001, Pages 952-954

  Tsukamoto, H ^a   Chen, E H ^a   Woodall, J M ^a   Gopal, V ^b  

^a Yale University   (United States)

^b PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346977487     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1338956     Document Type: Article

References (6)

1. V. Gopal, E.-H. Chen, E. Kvam, and J. M. Woodall, J. Vac. Sci. Technol. B 17, 1767 (1999).
2. V. Gopal, E. P. Kvam, T. P. Chin, and J. M. Woodall, Appl. Phys. Lett. 72, 2319 (1998).
3. H. Alawadhi, R. Vogelgesang, A. K. Ramdas, T. P. Chin, and J. M. Woodall, J. Appl. Phys. 82, 4331 (1997).
4. H. Kroemer, T. Y. Liu, and P. M. Petroff, J. Cryst. Growth 95, 96 (1989).
5. J. S. Speck, M. A. Brewer, G. Beltz, A. E. Romanov, and W. Pompe, J. Appl. Phys. 80, 3808 (1996).
6. M. Mostoller, M. F. Chisholm, and T. Kaplan, Phys. Rev. Lett. 72, 1494 (1994).