Electron accumulation at InN/AIN and InN/GaN interfaces

Physica Status Solidi C: Conferences

Volumn 2, Issue 7, 2005, Pages 2246-2249

  Veal, T D ^a   Piper, L F J ^a   Mahboob, I ^a   Lu, Hai ^b   Schaff, W J ^b   McConville, C F ^a  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LOSS SPECTROSCOPY; FILM GROWTH; GALLIUM NITRIDE; HALL EFFECT; INTERFACES (MATERIALS); LIGHT POLARIZATION; SEMICONDUCTING INDIUM COMPOUNDS; THIN FILMS;

ELECTRON ACCUMULATION; FILM THICKNESS; HALL MEASUREMENTS; SHEET DENSITY;

ELECTRON TRANSITIONS;

EID: 27444445096     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200461418     Document Type: Conference Paper

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