Thermoelectric evaluation of the dopant density of p -type InAs

Applied Physics Letters

Volumn 94, Issue 26, 2009, Pages

  Wagener, M C ^a   Wagener, V ^a   Botha, J R ^a  

^a NELSON MANDELA METROPOLITAN UNIVERSITY   (South Africa)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR DENSITY; CONDUCTIVE SURFACES; DIRECT DETERMINATION; INAS; METAL-ORGANIC VAPOR PHASE EPITAXY; P-TYPE; SURFACE LAYERS; TEMPERATURE DEPENDENCE; THERMOELECTRIC MEASUREMENTS;

CRYSTAL GROWTH; DOPING (ADDITIVES); INDIUM ARSENIDE; SEEBECK COEFFICIENT; THIN FILMS;

SEMICONDUCTING INDIUM;

EID: 67649948785     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3167822     Document Type: Article

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