MBE growth and characterization of Mg-doped InGaN and InAlN

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1863-1865

  Matthews, K D ^a   Chen, X ^a   Hao, D ^a   Schaff, W J ^a   Eastman, L F ^a  

^a Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT RESISTIVITIES; CRACK FREE; HALL MEASUREMENTS; HIGH QUALITY; HOT PROBE; INDIUM CONTENT; MBE GROWTH; MG FLUX; MG-DOPED; P-CONTACTS; P-TYPE; QUANTUM WELL; SAPPHIRE SUBSTRATES; SOLID SOLUBILITIES;

CRYSTAL GROWTH; GALLIUM NITRIDE; HOLE CONCENTRATION; METALLIC FILMS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; PHASE SEPARATION; SAPPHIRE; SEMICONDUCTOR GROWTH;

SECONDARY BATTERIES;

EID: 58149263575     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778707     Document Type: Conference Paper

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