Electrical and electrothermal transport in InN: The roles of defects

Physica B: Condensed Matter

Volumn 404, Issue 23-24, 2009, Pages 4862-4865

  Miller, N ^a,b   Ager III, J W ^a   Jones, R E ^a,b   Smith III, H M ^a,b   Mayer, M A ^a,b   Yu, K M ^a   Hawkridge, M E ^a   Liliental Weber, Z ^a   Haller, E E ^a,b   Walukiewicz, W ^a   Schaff, W J ^c   Gallinat, C ^d   Koblmuller G ^d   Speck, J S ^d  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b No 1760   (United States)

^c School of Chemical and Molecular Engineering   (United States)

^d Santa Barbara   (United States)

Author keywords

Dislocation scattering; Indium nitride; Thermopower; Transport

Indexed keywords

CAPACITANCE VOLTAGE; DISLOCATION DENSITIES; DISLOCATION SCATTERING; HALL MOBILITY MEASUREMENT; INDIUM NITRIDE; INN FILMS; LINE DEFECTS; MG-DOPED; P-TYPE CONDUCTIVITY; STRUCTURAL DEFECT DENSITY; THERMOPOWERS; TRANSPORT MEASUREMENTS; UNDOPED FILMS;

BOLTZMANN EQUATION; DEFECT DENSITY; DEFECTS; DOPING (ADDITIVES); HALL MOBILITY; INDIUM; NITRIDES; SCATTERING; SEMICONDUCTING FILMS; SINGLE CRYSTALS; THERMOELECTRIC POWER; TRANSPORT PROPERTIES;

GALVANOMAGNETIC EFFECTS;

EID: 74349091618     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.08.242     Document Type: Article

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