Non-chemically amplified resists for 193-nm immersion lithography: Influence of absorbance on performance

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7639, Issue , 2010, Pages

  Chen, Lan ^a   Goh, Yong Keng ^a   Lawrie, Kirsten ^a   Smith, Bruce ^b   Montgomery, Warren ^c   Zimmerman, Paul A ^c   Blakey, Idriss ^a   Whittaker, Andrew K ^a  

^a UNIVERSITY OF QUEENSLAND   (Australia)

^b ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

^c SEMATECH   (United States)

Author keywords

EUV; Non CAR; non chemically amplified resists; polycarbonates; polymer architecture

Indexed keywords

193-NM IMMERSION; 193-NM LITHOGRAPHY; ABSORBANCE VALUES; ABSORBANCES; CHEMICALLY AMPLIFIED RESIST; EUV; POLYMER ARCHITECTURE; POLYMER BACKBONES; POLYMER SYSTEMS; THREE SYSTEMS;

CARBONATES; OLEFINS; PHOTORESISTS; POLYMERS;

POLYCARBONATES;

EID: 77953503927     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.846971     Document Type: Conference Paper

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