Hf-O-N and HfO2 barrier layers for Hf-Ti-O gate dielectric thin films

Microelectronic Engineering

Volumn 85, Issue 8, 2008, Pages 1758-1761

  Ramani, K ^a   Singh, R K ^a   Craciun, V ^a,b  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b NATIONAL INSTITUTE FOR LASER   (Romania)

Author keywords

Capacitance; Dielectrics; High k; Leakage; UV

Indexed keywords

HAFNIUM;

HAFNIUM COMPOUNDS;

EID: 48949116044     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.05.001     Document Type: Article

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