Substrate engineering for high-performance surface-channel III-V metal-oxide-semiconductor field-effect transistors

Applied Physics Letters

Volumn 91, Issue 23, 2007, Pages

  Xuan, Yi ^a   Ye, Peide D ^a   Shen, Tian ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; MATHEMATICAL MODELS; SEMICONDUCTOR DEVICES; TRANSCONDUCTANCE;

CHANNEL ENGINEERINGS; DRAIN VOLTAGES; SEMICONDUCTOR INTERFACES; SUBSTRATE ENGINEERINGS;

MOSFET DEVICES;

EID: 36849066892     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2822892     Document Type: Article

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