Metallorganic molecular beam epitaxy/etching of III-V semiconductors

Applied Surface Science

Volumn 130-132, Issue , 1998, Pages 377-381

  Gonda, S ^a   Asahi, H ^a   Yamamoto, K ^a   Hidaka, K ^a   Sato, J ^a   Tashima, T ^a   Asami, K ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; COMPOSITION EFFECTS; CRYSTAL ORIENTATION; ETCHING; MOLECULAR BEAM EPITAXY; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH;

GALLIUM ANTIMONIDE; INDIUM ARSENIDE; METALLORGANIC MOLECULAR BEAM EPITAXY (MOMBE); TRISDIMETHYLAMINOANTIMONY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032098610     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(98)00086-5     Document Type: Article

References (9)

1. H. Asahi T. Kaneko Y. Okuno Y. Itani K. Asami S. Gonda J. Cryst. Growth 120 1992 252
2. Y. Itani H. Asahi T. Kaneko Y. Okuno S. Gonda J. Appl. Phys. 73 1993 1161
3. H. Asahi X.F. Liu K. Inoue D. Marx K. Asami K. Miki S. Gonda J. Cryst. Growth 145 1994 668
4. X.F. Liu H. Asahi K. Inoue D. Marx K. Asami K. Miki S. Gonda Appl. Phys. Lett. 65 1994 1027
5. J. Sato, H. Asahi, T. Tashima, K. Hidaka, K. Yamamoto, K. Asami, S. Gonda, to be published.
6. K. Yamamoto H. Asahi K. Miki S. Gonda J. Cryst. Growth 173 1997 21
7. M. Naganuma S. Miyazaki H. Iwasaki J. Vac. Sci. Technol. 17 1980 606
8. S. Salim J.P. Lu K.F. Jensen D.A. Bohling J. Cryst. Growth 124 1992 16
9. K. Yamamoto H. Asahi T. Hayashi K. Asami S. Gonda J. Cryst. Growth 164 1996 117