Evaluation of NbN thin films grown by MOCVD and plasma-enhanced ALD for gate electrode application in high-k/SiO2 gate stacks

Semiconductor Science and Technology

Volumn 25, Issue 4, 2010, Pages

  Hinz, J ^a   Bauer, A J ^a   Thiede, T ^b   Fischer, R A ^b   Frey, L ^a,c  

^a FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB   (Germany)

^b RUHR UNIVERSITY BOCHUM   (Germany)

^c UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOUR DEPOSITION; CONTACT MATERIAL; GATE ELECTRODE MATERIALS; GATE ELECTRODES; GATE STACKS; INTER-DIFFUSION; LOW POWER; METAL ORGANIC; MOCVD; NBN THIN FILM; OXIDE DEGRADATION; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; POLY-SI; THERMAL TREATMENT;

CHEMICAL VAPOR DEPOSITION; DEGRADATION; DIELECTRIC MATERIALS; ELECTRIC CONTACTS; ELECTROCHEMICAL ELECTRODES; GATE DIELECTRICS; GATES (TRANSISTOR); GRAFTING (CHEMICAL); HAFNIUM COMPOUNDS; LOGIC GATES; MOS CAPACITORS; ORGANIC CHEMICALS; ORGANOMETALLICS; PLASMA DEPOSITION; POLYSILICON; SILICON COMPOUNDS; SYNTHESIS (CHEMICAL); WORK FUNCTION;

ELECTROLYTIC CAPACITORS;

EID: 77950954489     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/4/045009     Document Type: Article

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