Analytical modeling of tunneling current through Si O2-Hf O2 stacks in metal oxide semiconductor structures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 27, Issue 1, 2009, Pages 338-345

  Coignus, J ^a   Clerc, R ^a   Leroux, C ^a   Reimbold, G ^a   Ghibaudo, G ^a   Boulanger, F ^a  

^a IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE COUPLED DEVICES; ELECTRON TUNNELING; HAFNIUM; HAFNIUM COMPOUNDS; METALLIC COMPOUNDS; MOS DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS; STRUCTURAL METALS;

ANALYTICAL MODELING; DIRECT TUNNELING CURRENTS; INTERFACIAL OXIDES; INVERSION LAYERS; METAL OXIDE SEMICONDUCTOR STRUCTURES; NUMERICAL SIMULATIONS; SUBBAND ENERGIES; TRANSMISSION PROBABILITIES; TUNNELING CURRENTS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 59949096992     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.3043539     Document Type: Article

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