Atomic layer deposited TaCy metal gates: Impact on microstructure, electrical properties, and work function on HfO2 high- k dielectrics

Journal of Applied Physics

Volumn 102, Issue 10, 2007, Pages

  Triyoso, D H ^a   Gregory, R ^a   Schaeffer, J K ^a   Werho, D ^a,c   Li, D ^b   Marcus, S ^b   Wilk, G D ^b  

^a FREESCALE SEMICONDUCTOR INC   (United States)

^b ASM AMERICA   (United States)

^c MEDTRONIC INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONFORMAL DEPOSITION; FOUR-POINT PROBES; METAL GATES;

ATOMIC LAYER DEPOSITION; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; MICROSTRUCTURE; MOSFET DEVICES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

TANTALUM COMPOUNDS;

EID: 36749091185     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2817620     Document Type: Article

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