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Volumn 201, Issue 22-23 SPEC. ISS., 2007, Pages 9109-9116

LI-MOCVD of HfO2 thin films using engineered amide based Hf precursors

Author keywords

High k oxides metalorganic precursors; LI MOCVD; Malonates; Thin films

Indexed keywords

CHARACTERIZATION; HAFNIUM COMPOUNDS; MASS SPECTROMETRY; NUCLEAR MAGNETIC RESONANCE SPECTROSCOPY; SURFACE ROUGHNESS; THERMODYNAMIC PROPERTIES; THIN FILMS; X RAY ANALYSIS;

EID: 34547678614     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2007.04.055     Document Type: Article
Times cited : (15)

References (15)
  • 2
    • 34547724643 scopus 로고    scopus 로고
    • The International Technology Roadmap for Semiconductors, Semiconductor Industry Association (SIA), http://public.itrs.net.
  • 3
    • 34547713761 scopus 로고    scopus 로고
    • http://www.intel.com/technology/silicon/45nm technology.htm (2007) http://www.sciam.com/article.cfm?chanID = sa003&articleID = 742A3381-E7F2-99DF- 3D54A13380979044, (2007).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.