Evaluation of atomic layer deposited NbN and NbSiN as metal gate materials

Journal of the Electrochemical Society

Volumn 153, Issue 5, 2006, Pages

  Van Hoornick, N ^a,e   De Witte, H ^b   Witters, T ^a   Zhao, C ^a,e   Conard, T ^a   Huotari, H ^c   Swerts, J ^b   Schram, T ^a   Maes, J W ^b   De Gendt, S ^a,d,e   Heyns, M ^a  

^a IMEC   (Belgium)

^b ASM BELGIUM   (Belgium)

^c ASM Microchemistry Oy   (Finland)

^d UNIVERSITY OF LEUVEN   (Belgium)

^e ELECTROCHEMICAL SOCIETY   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION (ALD); CAPACITANCE-VOLTAGE MEASUREMENTS; METAL GATE MATERIALS;

CAPACITANCE; DEPOSITION; ELECTROCHEMISTRY; ELECTRODES; MOS DEVICES; THERMODYNAMIC STABILITY; THIN FILMS; VOLTAGE MEASUREMENT;

NIOBIUM COMPOUNDS;

EID: 33645712392     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2181430     Document Type: Article

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