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Applied Physics Letters

Volumn 82, Issue 1, 2003, Pages 121-123

Time of flight secondary ion mass spectrometry study of silicon nanoclusters embedded in thin silicon oxide layers

(6) Perego, M a Ferrari, S a Spiga, S a Bonera, E a Fanciulli, M a Soncini, V b

a LABORATORIO MDM (Italy)

b STMICROELECTRONICS (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC PHYSICS; FILM GROWTH; ION IMPLANTATION; NUCLEATION; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SILICA; SILICON WAFERS; SPUTTERING;

SILICON NANOCRYSTALS;

NANOSTRUCTURED MATERIALS;

EID: 0037421392 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1534937 Document Type: Article

Times cited : (26)

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