Oxygen-deficiency centers in SiO2 thermally nitrided in NO

Microelectronic Engineering

Volumn 72, Issue 1-4, 2004, Pages 81-84

  Tello, P G ^a   Afanas'ev, V V ^b   Stesmans, A ^b  

^a PHILIPS RESEARCH LABORATORIES   (Netherlands)

^b KU LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; HEAT TREATMENT; HOLE TRAPS; INTERFACES (MATERIALS); MOS DEVICES; NITRATION; NITROGEN OXIDES; PARAMAGNETIC RESONANCE; QUENCHING;

INTERNAL ELECTRON PHOTO EMISSION (IEP); POST-OXIDATION ANNEALING (POA); SEMICONDUCTOR MEMORY DEVICES;

SILICA;

EID: 1642603320     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2003.12.020     Document Type: Conference Paper

References (6)

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2. Papadas C.etal Electron. Lett. 29:1993;242.
3. Chim W.K., Lim P.S. J. Appl. Phys. 91:2002;1304.
4. Yount J.T., et al. IEEE Trans. Nucl. Sci. NS-39. 221:1992;1.
5. Afanas'ev V.V., Stesmans A. Phys. Rev. Lett. 78:1997;2437.
6. Afanas'ev V.V., Stesmans A. Europhys. Lett. 53:2001;233.