Electron spin resonance study of as-deposited and annealed (Hf O2) x (Si O2) 1-x high- κ dielectrics on Si

Journal of Applied Physics

Volumn 101, Issue 1, 2007, Pages

  Triplett, B B ^a   Chen, P T ^a   Nishi, Y ^a   Kasai, P H ^b   Chambers, J J ^c   Colombo, L ^c  

^a Stanford University   (United States)

^b IBM ALMADEN RESEARCH CENTER   (United States)

^c TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

NITROGEN ANNEALING; TOTAL INTERFACE STATES; VALUE MAPPING;

ANNEALING; DEPOSITION; HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); PARAMAGNETIC RESONANCE; PERMITTIVITY; SILICA; SILICON WAFERS;

THICK FILMS;

EID: 33846332035     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2402974     Document Type: Article

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