Atomic layer deposition of silicon oxide thin films by alternating exposures to Si2Cl6and O3

Electrochemical and Solid-State Letters

Volumn 11, Issue 7, 2008, Pages

  Lee, Seung Won ^a   Park, Kwangchol ^b   Han, Byeol ^a   Son, Sang Ho ^c   Rha, Sa Kyun ^d   Park, Chong Ook ^b   Lee, Won Jun ^a  

^a Sejong University   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Anyequip Technology Corporation   (South Korea)

^d Hanbat National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; GROWTH RATE; PYROLYSIS; SILICA;

CHEMICAL VAPOR DEPOSITION FILMS; SILICON DIOXIDE THIN FILMS;

THIN FILMS;

EID: 43949088832     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2908201     Document Type: Article

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