Influence of channel and gate engineering on the analog and rf performance of DG MOSFETs

IEEE Transactions on Electron Devices

Volumn 57, Issue 4, 2010, Pages 820-826

  Mohankumar, N ^a   Syamal, Binit ^a   Sarkar, Chandan Kumar ^a  

^a JADAVPUR UNIVERSITY   (India)

Author keywords

Carrier transport efficiency; Dual metal double gate (DM DG); Halo implanted DG (HALO DG); Radio frequency (RF) applications; System on chip (SoC)

Indexed keywords

CARRIER TRANSPORT EFFICIENCY; DOUBLE GATE; RADIO FREQUENCIES; RADIO-FREQUENCY (RF) APPLICATIONS; SYSTEM-ON-CHIP;

ANALOG CIRCUITS; APPLICATION SPECIFIC INTEGRATED CIRCUITS; CMOS INTEGRATED CIRCUITS; KNOWLEDGE REPRESENTATION; METALS; MOS DEVICES; MOSFET DEVICES; PROGRAMMABLE LOGIC CONTROLLERS;

GALERKIN METHODS;

EID: 77950298323     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2040662     Document Type: Article

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