Impact of halo doping on the subthreshold performance of deep-submicrometer CMOS devices and circuits for ultralow power analog/ mixed-signal applications

IEEE Transactions on Electron Devices

Volumn 54, Issue 2, 2007, Pages 241-248

  Chakraborty, Saurav ^a   Mallik, Abhijti ^b   Sarkar, Chandan Kumar ^c   Rao, V Ramgopal ^d  

^a Simplex Infrastructures Ltd   (India)

^b KALYANI GOVERNMENT ENGINEERING COLLEGE   (India)

^c JADAVPUR UNIVERSITY   (India)

^d INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

Author keywords

CMOS; Halo; Lateral asymmetric channel (LAC); Mixed signal; Subthreshold; Ultralow power

Indexed keywords

AMPLIFIERS (ELECTRONIC); ANALOG CIRCUITS; DOPING (ADDITIVES); GAIN MEASUREMENT;

HALO; LATERAL ASYMMETRIC CHANNEL; SUBTHRESHOLD; ULTRALOW POWER;

CMOS INTEGRATED CIRCUITS;

EID: 33847645306     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.888630     Document Type: Article

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