Off-leakage and drive current characteristics of sub-100-nm SOI MOSFETs and impact of quantum tunnel current

IEEE Transactions on Electron Devices

Volumn 49, Issue 10, 2002, Pages 1775-1782

  Nakajima, Hidehiko ^b   Yanagi, Shin Ichiro ^b   Komiya, Kenji ^b   Omura, Yasuhisa ^a,b  

^a IEEE

^b KANSAI UNIVERSITY   (Japan)

Author keywords

Band to band tunneling; Double gate; Hydrodynamic transport; Leakage current; MOSFET; Single gate; SOI

Indexed keywords

COMPUTER SIMULATION; ELECTRON TUNNELING; HYDRODYNAMICS; LEAKAGE CURRENTS; PARAMETER ESTIMATION; SILICON ON INSULATOR TECHNOLOGY; TRANSPORT PROPERTIES;

BAND TO BAND TUNNELING; HYDRODYNAMIC TRANSPORT MODEL; QUANTUM TUNNEL CURRENT;

MOSFET DEVICES;

EID: 0036772198     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.803635     Document Type: Article

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