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Volumn 26, Issue 11, 2005, Pages 829-831

A novel split-gate MOSFET design realized by a fully silicided gate process for the improvement of transconductance and output resistance

Author keywords

Full nickel silicidation (NiSi); Output resistance; Split gate MOSFET; Transconductance

Indexed keywords

ELECTRIC RESISTANCE; GATES (TRANSISTOR); ION IMPLANTATION; LOW TEMPERATURE OPERATIONS; NICKEL COMPOUNDS; SEMICONDUCTING ANTIMONY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; TRANSCONDUCTANCE;

EID: 27744578895     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2005.857718     Document Type: Article
Times cited : (21)

References (10)
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  • 2
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    • J. Yuan and J. C. S. Woo, "Split gate engineering for RF/Analog application in sub 50 nm NMOSFET," in Proc. SSDM, 2003, pp. 436-437.
    • (2003) Proc. SSDM , pp. 436-437
    • Yuan, J.1    Woo, J.C.S.2
  • 3
    • 0032670723 scopus 로고    scopus 로고
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    • W. Long, H. Ou, J. M. Kuo, and K. K. Chin, "Dual-material gate (DMG) field effect transistor," IEEE Trans. Electron Devices, vol. 47, no. 9, pp. 865-870, Sep. 1999.
    • (1999) IEEE Trans. Electron Devices , vol.47 , Issue.9 , pp. 865-870
    • Long, W.1    Ou, H.2    Kuo, J.M.3    Chin, K.K.4
  • 4
    • 0035364878 scopus 로고    scopus 로고
    • "On the mobility versus drain current relation for a nanoscale MOSFET"
    • Jun.
    • M. Lundstrom, "On the mobility versus drain current relation for a nanoscale MOSFET," IEEE Electron Device Lett., vol. 22, no. 6, pp. 293-295, Jun. 2001.
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    • Lundstrom, M.1
  • 7
    • 0036932380 scopus 로고    scopus 로고
    • "Transistors with dual work function metal gate by single full silicidation (FUSI) of polysilicon gates"
    • W. Maszara, Z. Krivokapic, P. King, J. S. Goollgweon, and M. R. Lin, "Transistors with dual work function metal gate by single full silicidation (FUSI) of polysilicon gates," in IEDM Tech. Dig., 2002, pp. 367-370.
    • (2002) IEDM Tech. Dig. , pp. 367-370
    • Maszara, W.1    Krivokapic, Z.2    King, P.3    Goollgweon, J.S.4    Lin, M.R.5
  • 9
    • 13444310993 scopus 로고    scopus 로고
    • "Tunable work function in fully nickel silicided polysilicon gates for metal gate MOSFET applications"
    • Feb.
    • J. Yuan and J. C. S. Woo, "Tunable work function in fully nickel silicided polysilicon gates for metal gate MOSFET applications," IEEE Electron Device Lett., vol. 26, no. 2, pp. 87-89, Feb. 2005.
    • (2005) IEEE Electron Device Lett. , vol.26 , Issue.2 , pp. 87-89
    • Yuan, J.1    Woo, J.C.S.2
  • 10
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    • "SILVACO International"
    • Santa Clara, CA
    • "SILVACO International," ATLAS User's Manual, Santa Clara, CA.
    • ATLAS User's Manual


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.