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Volumn 47, Issue 1, 2000, Pages 113-120
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Exploring the novel characteristics of hetero-material gate field-effect transistors (HMGFET's) with gate-material engineering
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Author keywords
[No Author keywords available]
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Indexed keywords
COMPUTER SIMULATION;
HETEROJUNCTIONS;
MODULATION;
MOSFET DEVICES;
SEMICONDUCTING SILICON;
THRESHOLD VOLTAGE;
ULSI CIRCUITS;
ASYMMETRIC SPACER;
CHANNEL LENGTH MODULATION;
GATE MATERIAL ENGINEERING;
HETERO MATERIAL GATE FIELD EFFECT TRANSISTORS;
SHORT CHANNEL EFFECT;
SILICON TECHNOLOGY;
GATES (TRANSISTOR);
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EID: 0033888854
PISSN: 00189383
EISSN: None
Source Type: Journal
DOI: 10.1109/16.817576 Document Type: Article |
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Times cited : (69)
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References (18)
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