The effect of hydrostatic pressure on the electrical characterization of Au/n - InP Schottky diodes

Superlattices and Microstructures

Volumn 47, Issue 5, 2010, Pages 586-591

  Ucar, N ^a   Ozdemir, A F ^a   Aldemir, D A ^a   Cakmak, S ^a   Calik, A ^a   Yildiz, H ^a   Cimilli, F ^b  

^a SULEYMAN DEMIREL UNIVERSITY   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

Author keywords

Barrier height; Fermi level pinning; Hydrostatic pressure; Ideality factor; Interface states; Schottky barrier diode

Indexed keywords

BARRIER HEIGHTS; FERMI LEVEL PINNING; IDEALITY FACTORS; INTERFACE STATE; INTERFACE STATES;

CURRENT VOLTAGE CHARACTERISTICS; DIODES; DISTILLATION; ELECTRIC CURRENTS; ELECTRON MOBILITY; FERMI LEVEL; FERMIONS; HYDRAULICS; HYDRODYNAMICS; HYDROSTATIC PRESSURE; PRESSURE EFFECTS;

SCHOTTKY BARRIER DIODES;

EID: 77950063862     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2010.02.003     Document Type: Article

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