Barrier height variations and interface properties of PtSi/Si structures

Surface Review and Letters

Volumn 13, Issue 2-3, 2006, Pages 273-278

  Sellai, A ^a   Dawson, P ^b  

^a SULTAN QABOOS UNIVERSITY   (Oman)

^b QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

C V characteristics; I V T characteristics; Schottky contacts; Suicide interface

Indexed keywords

CRYSTALLINE MATERIALS; CURRENT VOLTAGE CHARACTERISTICS; PHASE INTERFACES; PLATINUM COMPOUNDS; SILICON; SUBSTRATES; SURFACE CHEMISTRY; TEMPERATURE DISTRIBUTION;

BARRIER HEIGHT; CRYSTALLINE SILICON SUBSTRATES; GAUSSIAN DISTRIBUTION; INTERFACIAL PROPERTIES; SUICIDE INTERFACE;

SCHOTTKY BARRIER DIODES;

EID: 33751282704     PISSN: 0218625X     EISSN: None     Source Type: Journal    
DOI: 10.1142/s0218625x06008244     Document Type: Article

References (12)

1. P. E. Schmid, P. S. Ho, H. Foil and T. Y. Tan, Phys. Rev. B 74 (1983) 4593.
2. H. C. Card and E. H. Rhoderick, J. Phys. D 4 (1971) 1589.
3. E. H. Rhoderick and R. H. Williams, Metal Semiconductor Contacts, 2nd edn. (Oxford, Clarendon, 1998).
4. P. Chattopadhyay, Solid State Elect. 37 (1994) 1759.
5. J. Werner, A. F. Levi, R. T. Tung, M. Anzlowar and M. Pinto, Phys. Rev. Lett. 60 (1988) 53.
6. P. Chattopadhyay and B. RayChaudhuri, Solid State Elect. 35 (1992) 1023.
7. J. Werner, Appl. Phys. A 47 (1988) 291.
8. H. Palm, M. Arbes and M. Schulz, Phys. Rev. Lett. 71 (1993) 2224.
9. P. Chattopadhyay and B. RayChaudhuri, Solid State Elect. 36 (1993) 605.
10. S. Pandey and S. Kal, Solid State Elect. 42 (1998) 943.
11. K. Maeda, Appl. Surf. Sci. 159-160 (2000) 154.
12. W. Moench, Semiconductor Surfaces and Interfaces, 2nd edn. (Springer, Berlin, 1995).