Current- and capacitance-voltage characteristics of Cd/p-GaTe Schottky barrier diodes under hydrostatic pressure

Semiconductor Science and Technology

Volumn 21, Issue 2, 2006, Pages 124-130

  Cankaya G ^a   Abay, B ^b  

^a GAZIOSMANPASA UNIVERSITY   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CADMIUM; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; FERMI LEVEL; METALLIZING; SEMICONDUCTING GALLIUM COMPOUNDS; SPATIAL VARIABLES MEASUREMENT;

CONDUCTION-BAND MINIMUM (CBM); HYDROSTSTIC PRESSURE; SCHOTTKY BARRIER DIODES (SBD); SEMICONDUCTOR BAND GAP;

SCHOTTKY BARRIER DIODES;

EID: 30744451681     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/2/004     Document Type: Article

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