A simple approach to the capacitance technique for determination of interface state density of a metal-semiconductor contact

Solid-State Electronics

Volumn 42, Issue 6, 1998, Pages 943-949

  Pandey, Santosh ^a   Kal, S ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY   (India)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC ADMITTANCE; ELECTRIC RESISTANCE; SEMICONDUCTING SILICON; SEMICONDUCTOR METAL BOUNDARIES;

MULTIFREQUENCY ADMITTANCE METHOD;

SCHOTTKY BARRIER DIODES;

EID: 0032089820     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00267-0     Document Type: Article

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