On the determination of interface state density in n-InP Schottky structures by current-voltage measurements comparison with DLTS results

Solid-State Electronics

Volumn 44, Issue 3, 2000, Pages 515-520

  Ahaitouf, A ^a   Losson, E ^b   Bath, A ^b  

^a SIDI MOHAMED BEN ABDELLAH UNIVERSITY   (Morocco)

^b UNIVERSITÉ DE LORRAINE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC VARIABLES MEASUREMENT; ELECTRONIC DENSITY OF STATES; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SEMICONDUCTING INDIUM PHOSPHIDE;

CURRENT VOLTAGE MEASUREMENTS; INTERFACE STATE DENSITY;

SCHOTTKY BARRIER DIODES;

EID: 0034158837     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00269-5     Document Type: Article

References (31)

1. Shi Z.Q., Wallace R.L., Anderson W.A. Appl. Phys. Lett. 59:1991;446.
2. Yamada M., Wahi A.K., Kendelewicz T., Spicer W.E. Appl. Phys. Lett. 58:1991;2701.
3. Huang T.S., Fang R.S. Solid State Electron. 37:1994;1461.
4. Hasegawa H. Solid State Electron. 41:1997;1441.
5. Card H.C., Rhoderick E.H. J. Phys. D. Appl. Phys. 4:1971;1589.
6. Ahaitouf A., Bath A., Losson E., Abarkan E. Mat. Sci. Eng. B52:1998;208.
7. Maeda K., Ikoma H., Sato K., Ishida T. Appl. Phys. Lett. 62:1993;2560.
8. Tseng H.H., Wu C.Y. J. Appl. Phys. 61:1987;299.
9. Gallet D, Gendry M, Hollinger G, Overs A, Jacob G, Boudart B, Gauneau M, L'haridon H, Lescronier D. Proceedings of Third International Conference on Indium Phosphide and Related Materials, Park Hotel, Cardiff, Wales, 8-11 April, 1991.
10. Rhoderick E.H., Williams R.H. Metal semiconductor contact. 2nd ed. 1988;Clarendon, Oxford.
11. Eftekhari G. Phys. Stat. Sol. (a). 140:1993;189.
12. Newman N., Kendelewicz T., Bowman L., Spicer W.E. Appl. Phys. Lett. 46:1985;1176.
13. Pankove J.I. Optical process in semiconductors. 1975;412 Dover, New York.
14. Viktorovitch P. Rev. Phys. Appl. 25:1990;895.
15. Renard P., Ravelet S., Simon C., Bouziane A., Lepley B. Mat. Sci. Eng. B20:1993;157.
16. Aboelfotoh M.O. Phys. Rev. B. B39:1989;5070.
17. Michel C., Guillot J.M., Lepley B., Dupont-Pavlosky N., Karnicka-Moscicka K. J. Phys. D: Appl. Phys. 16:1983;2229.
18. Hattori K., Torii Y. J. Appl. Phys. 69:1991;3130.
19. Eftekhari G. Jpn. J. Appl. Phys. 33:1994;6095.
20. Chae H.J., Kim C.H., Kwon S.D., Lee J.B., Choe B.D., Lim H., Lee H.J. J. Appl. Phys. 72:1992;3589.
21. Yamasaki H., Yoshida M., Sugano T. Jpn. J. Appl. Phys. 18:1979;113.
22. Landheer D., Yousefi G.H., Webb J.B. J. Appl. Phys. 75:1994;3516.
23. Dmowski K., Vuillaume D., Lepley B., Losson E., Bath A. Rev. Sci. Instrum. 66:1995;4283.
24. Slowik J.H., Ashok S. Appl. Phys. Lett. 49:1986;1784.
25. Chen M.C., Lang D.V., Dautremont-Smith W.C., Sergent A.M., Harbisson J.P. Appl. Phys. Lett. 44:1984;790.
26. Dmowski K., Lepley B., Losson E., El Bouabdellati M. J. Appl. Phys. 74:1993;3936.
27. Allen R.E., Sankey O.F., Dow J.D. Surface Science. 168:1986;376.
28. Spicer W.E., Lindau I., Skeath P., Su C.Y. J. Vac. Sci. Technol. 17:1980;1019.
29. Srivastava G.P. Semi-insulating III-V materials. 1980;Shiva, Nottingham.
30. Newman N., Spicer W.E., Kendelewicz T., Lindau I. J. Vac. Sci. Technol. B4:1986;931.
31. Bertenes K.A., Kendelewicz T., List R.S., Williams M.D., Lindau I., Spicer W.E. J. Vac. Sci. Technol. A4:1986;1424.