Effects of 60Co γ-ray irradiation on the electrical characteristics of Au/n-GaAs (MS) structures

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 555, Issue 1-2, 2005, Pages 260-265

  Karatas S ^a   Turut A ^b   Altindal, S ^c  

^a KAHRAMANMARAS SUTCU IMAM UNIVERSITY   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

^c GAZI UNIVERSITY   (Turkey)

Author keywords

60Co ray; Au n GaAs contacts; I V C V characteristics; Interface states; Series resistance

Indexed keywords

COBALT; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; GOLD; IRRADIATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES;

60CO Γ-RAY; AU/N-GAAS CONTACTS; I-V/C-V CHARACTERISTICS; INTERFACE STATE; SERIES RESISTANCE;

GAMMA RAYS;

EID: 28044459648     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.09.017     Document Type: Article

References (31)

1. S. Ashok, J.M. Borrego, and R.J. Guttmann IEEE Trans. Elect. Nucl. Sci. NS-25 6 1978 1473
2. G.A. Umana-Membreno, and B.D. Nener IEEE Trans. Electron Devices ED-50 12 2003 2326
3. R. Singh, S.K. Arora, and D. Kanjilal Mater. Sci. Semicond. Process. 4 2001 425
4. K.H. Zainninger, and A.G. Holmes-Siedle RCA Rev. 1967 208
5. M.R. Chin, and T.P. Ma Appl. Phys. Lett. 42 10 1983 883
6. P. Jayavel, M. Udhayasankar, J. Kumar, K. Asokan, and D. Kanjilal Nuc. Instr. and Meth. B 156 1999 110
7. T.P. Ma, and P.V. Dressendorfer Ionizing Radiation Effect in MOS Devices and Circuits 1989 Wiley New York
8. E.F. Da Silva Jr, E.A. De Vasconcelos, and V.N. Freire Microelectron. Eng. 51-52 2000 567
9. T.P. Ma Appl. Phys. Lett. 27 11 1975 615
10. P.S. Winokur, J.M. McGarrity, and H.E. Boesch IEEE Trans. Nucl. Sci. NS-23 1976 1580
11. J.R. Schwank, and P.S. Winokur IEEE Trans. Nucl. Sci. NS-33 6 1986 1178
12. P.S. Winokur, J.R. Schwank, P.J. McWhorter, P.V. Dressendorfer, and D.C. Turpin IEEE Trans. Nucl. Sci. NS-31 1984 1453
13. M. Yoshikawa, T. Ohshima, H. Itoh, and I. Nashiyama Electron. Commun. Japan, Part 2 81 10 1998 140
14. R.K. Chauhan, and P. Chakrabarti Microelectron. J. 33 2002 197
15. G.W. Hughes J. Appl. Phys. 48 12 1977 5357
16. J.M. Benedetto, and H.E. Boesch Jr IEEE Trans. Elect. Nucl. Sci. NS-31 6 1984 1461
17. M. Walters, and A. Reisman J. Appl. Phys. 67 6 1990 2992
18. T. Chen, Z. Luo, J.D. Cressler, T.F. Isaacs-Smith, J.R. Williams, G. Chung, and S.D. Clark Solid-State Electron. 46 2002 2231
19. A. Tataroǧlu, Ş. Altindal, S. Karadeniz, and N. Tuǧluoǧlu Microelectron. J. 34 2003 1043
20. M. Ashry, and S.A. Fayek Renew. Energy 23 2001 441
21. M.Y. Feteha, M. Soliman, N.G. Gomaa, and M. Ashry Renew. Energy 26 2002 113
22. Ş. Karataş, and Ş. Altindal Solid-State Electron. 49 6 2005 1052
23. S.M. Sze Physics of Semiconductor Devices second ed. 1981 Wiley New York
24. H.C. Card, and E.H. Rhoderick J. Phys D 4 1971 1589
25. C. Sah Fundamental of Solid-State Electronics 1991 World Scientific Singapore
26. G.A. Umana, and B.D. Nener IEEE Trans. Electron Devices ED-50 12 2003 2326
27. E.H. Nicollian, and A. Goetzberger Appl. Phys. Lett. 7 8 1965 216
28. S.K. Cheung, and N.W. Cheung Appl. Phys. Lett. 49 2 1986 85
29. D.K. Schroder Semiconductor Material and Device Characterization 1998 Wiley London
30. P. Cova, and A. Singh Solid-State Electron. 33 1 1990 11
31. M.K. Hudait, and S.B. Kruppanidhi Solid-State Electron. 44 6 2000 1089