Effect of hydrostatic pressure on the electronic and optical properties of InP

Solid-State Electronics

Volumn 44, Issue 12, 2000, Pages 2193-2198

  Bouarissa, N ^a  

^a ABDUS SALAM INTERNATIONAL CENTRE FOR THEORETICAL PHYSICS   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRONIC STRUCTURE; ENERGY GAP; HYDROSTATIC PRESSURE; SEMICONDUCTING INDIUM PHOSPHIDE;

HYDROSTATIC DEFORMATION POTENTIALS; PSEUDO-POTENTIAL METHODS;

INTEGRATED OPTOELECTRONICS;

EID: 0034497971     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(00)00147-7     Document Type: Article

References (30)

1. Souza P.L., Ribas P.R., Bellini J.V., Mendes W.M. J Appl Phys. 79:1996;3482.
2. Phillips JC. Bonds and bands in semiconductors. New York: Academic Press; 1973.
3. Cohen ML, Chelikowsky JR. Electronic structure and optical properties of semiconductors. Berlin: Springer; 1988.
4. Huang M.-.Z., Ching W.Y. Phys Rev B. 47:1993;9449.
5. Balkanski M, editor. Handbook on semiconductors, optical properties of solids, vol. 2. NH: North-Holland; 1980.
6. Camphausen D.L., Connell G.A.N., Paul W. Phys Rev Lett. 26:1971;184.
7. Muller H., Trommer R., Cardona M., Vogl P. Phys Rev B. 21:1980;4879.
8. Jung Y.J., Kim B.H., Lee H.J., Woolley J.C. Phys Rev B. 26:1982;3151.
9. Booth I.M., Hawton M.H., Keeler W.J. Phys Rev B. 25:1982;7713.
10. Vohra Y.K., Weir S.T., Ruoff A.L. Phys Rev B. 31:1985;7344.
11. Menoni C.S., Hochheimer H.D., Spain I.L. Phys Rev B. 33:1986;5896.
12. Steube M., Reimann K., Brandt O., Yang H., Ploog K.H. Phys Stat Sol B. 211:1999;57.
13. Holzapfel W.B. Rep Prog Phys. 59:1996;29.
14. Tsay Y.F., Mitra S.S., Bendow B. Phys Rev B. 10:1974;1476.
15. Van Camp P.E., Van Doren V.E., Devreese J.T. Phys Rev B. 41:1990;1598.
16. Chelikowsky J.R., Cohen M.L. Phys Rev B. 14:1976;556.
17. Manghi F., Riegler G., Bertoni C.M., Bachelet G.B. Phys Rev B. 31:1985;3680.
18. Stampfl C., Van de Walle C.G. Phys Rev B. 59:1999;5521.
19. Hybertsen M.S., Louie S.G. Phys Rev B. 34:1986;5390.
20. Kobayasi T., Nara H. Bull Coll Med Sci Tohoku Univ. 2:1993;7.
21. Adachi S. J Appl Phys. 61:1987;4869.
22. Brust D. Phys Rev A. 134:1964;1337.
23. Brust D. Phys Rev A. 139:1965;489.
24. Murnaghan F.D. Proc Natl Acad Sci USA. 30:1944;244.
25. Trommer R., Muller H., Cardona M., Vogl P. Phys Rev B. 21:1980;4869.
26. Chelikowsky J.R., Wagener T.J., Weaver J.H., Jin A. Phys Rev B. 40:1989;9644.
27. Bouarissa N. Infrared Phys Technol. 40:1999;117.
28. Levinshtein M, Rumyantsev S, Shur M, editors. Handbook series on semiconductor parameters, vol. 1. Singapore: World Scientific; 1996.
29. Yu PY, Cardona M. Fundamentals of semiconductors. Berlin: Springer; 1996, p. 233.
30. Welkowsky M., Braunstein R. Phys Rev B. 5:1972;497.