Stresses and strains in epilayers, stripes and quantum structures of III-V compound semiconductors

Semiconductor Science and Technology

Volumn 11, Issue 5, 1996, Pages 641-671

  Jain, S C ^a,c   Willander, M ^b   Maes, H ^a  

^a IMEC   (Belgium)

^b LINKÖPING UNIVERSITY   (Sweden)

^c UNIVERSITY OF OXFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CRYSTAL STRUCTURE; ENERGY GAP; FINITE ELEMENT METHOD; MATHEMATICAL MODELS; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WIRES; STRAIN; STRESSES;

LARGE AREA EPILAYER SUBSTRATE STRUCTURE; RAMAN MEASUREMENTS; STRESSOR INDUCED QUANTUM WIRES; THREE DIMENSIONAL GROWTH;

HETEROJUNCTIONS;

EID: 0030145924     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/11/5/004     Document Type: Article

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