Investigation of I-V characteristics of Au/n-GaAs Schottky diodes after hydrostatic pressure

Physica Status Solidi (A) Applied Research

Volumn 179, Issue 2, 2000, Pages 469-473

  Cankaya G ^a   Ucar N ^a   Turut A ^a  

^a ATATÜRK UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GOLD; HYDROSTATIC PRESSURE; POTENTIAL ENERGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR METAL BOUNDARIES;

BARRIER HEIGHT;

SCHOTTKY BARRIER DIODES;

EID: 0343777401     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200006)179:2<469::AID-PSSA469>3.0.CO;2-U     Document Type: Article

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