Temperature-dependence of barrier height of swift heavy ion irradiated Au/n-Si Schottky structure

Solid-State Electronics

Volumn 50, Issue 11-12, 2006, Pages 1835-1837

  Kumar, Sandeep ^a   Katharria, Y S ^a   Kumar, Sugam ^a   Kanjilal, D ^a  

^a INTER UNIVERSITY ACCELERATOR CENTRE   (India)

Author keywords

I V characteristics; Schottky diodes; Temperature dependence barrier height

Indexed keywords

ELECTRIC CURRENT DISTRIBUTION MEASUREMENT; ELECTRIC PROPERTIES; FERMI LEVEL; IRRADIATION; SCHOTTKY BARRIER DIODES;

FERMI LEVEL PINNING; I-V CHARACTERISTICS; SCHOTTKY DIODES; TEMPERATURE-DEPENDENCE BARRIER HEIGHT;

HEAVY IONS;

EID: 33751238213     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.09.004     Document Type: Article

References (14)

1. Chason E., Picraux S.T., Poate J.M., Borland J.O., Current M.I., Rubia de le T.D., et al. J Appl Phys 81 (1997) 6513
2. Borland J.O., and Koelsch R. Solid State Technol 36 (1993) 28
3. Williams J.S., Elliman R.G., Ridgway M.C., Jagadish C., Ellingboe S.L., Goldberg R., et al. Nucl Instrum Methods Phys Res B 80/81 (1993) 507
4. Sze S.M. Physics of semiconductor devices. 2nd ed. (1981), Wiley, New York
5. Kumar S., and Kanjilal D. Nucl Instrum Methods Phys Res B 248 (2006) 109
6. Kanjilal D., Chopra S., Narayanan M.M., Iyer I.S., Jha V., Joshi R., et al. Nucl Instrum Methods Phys Res A 328 (1993) 97
7. Rhoderic E.H., and Williams R.H. Metal-semiconductor contacts. 2nd ed. (1988), Claredon Press, Oxford
8. Werner J.H., and Guttler H.H. J Appl Phys 73 (1993) 1315
9. Revva P., Langer J.M., Missous M., and Parker A.R. J Appl Phys 74 (1993) 416
10. Levalois M., Bogdanski P., and Toulemonde M. Nucl Instrum Methods Phys Res B 63 (1992) 14
11. Svensson B.G., Jagdish C., Hallen A., and Lalita J. Nucl Instrum Methods Phys Res B 106 (1995) 183
12. Coffa S., Privitrera V., Priolo F., Libertino S., and Mannino G. J Appl Phys 81 (1997) 1639
13. Baicker J.A. Phys Rev 129 (1963) 1174
14. Belton J.L., Halliburton K., Libertino S., and Eaglesham D.J. J Appl Phys 82 (1997) 120