Electrical characterization of vacuum-deposited n-CdS/p-CdTe heterojunction devices

Semiconductor Science and Technology

Volumn 12, Issue 5, 1997, Pages 600-608

  Bayhan, H ^a   Ercelebi C ^a  

^a MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CHARACTERIZATION; DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRON TUNNELING; GRAIN SIZE AND SHAPE; INTERFACES (MATERIALS); SEMICONDUCTING CADMIUM COMPOUNDS; SOLAR CELLS; THERMAL EFFECTS;

CADMIUM DICHLORIDE DIP; CURRENT TRANSPORT MECHANISM; CURRENT VOLTAGE ANALYSIS; HETEROINTERFACE; INTERFACE RECOMBINATION; POST DEPOSITION PROCESS; VALENCE BAND;

HETEROJUNCTIONS;

EID: 0031144671     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/12/5/014     Document Type: Article

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