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Applied Physics Express

Volumn 3, Issue 3, 2010, Pages

Relationship between chemical gradient and line edge roughness of chemically amplified extreme ultraviolet resist

(4) Kozawa, Takahiro a Oizumi, Hiroaki b Itani, Toshiro b Tagawa, Seiichi a

a OSAKA UNIVERSITY (Japan)

b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL GRADIENTS; CHEMICALLY AMPLIFIED RESIST; CONCENTRATION GRADIENTS; EXPOSURE DOSE; EXTREME ULTRAVIOLET; LATENT IMAGES; LINE EDGE ROUGHNESS; RESIST PATTERN; SENSITIZATION MECHANISMS;

CHEMICAL COMPOUNDS; ELECTRON BEAM LITHOGRAPHY; PHOTORESISTS; ULTRAVIOLET DEVICES;

ROUGHNESS MEASUREMENT;

EID: 77949858370 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.1143/APEX.3.036501 Document Type: Article

Times cited : (92)

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