22-nm Half-pitch extreme ultraviolet node development at the SEMATECH Berkeley microfield exposure tool

Microelectronic Engineering

Volumn 86, Issue 4-6, 2009, Pages 448-455

  Naulleau, Patrick P ^a   Anderson, Christopher N ^a   Chiu, Jerrin ^a   Denham, Paul ^a   George, Simi ^a   Goldberg, Kenneth A ^a   Goldstein, Michael ^b   Hoef, Brian ^a   Hudyma, Russ ^e   Jones, Gideon ^a   Koh, Chawon ^b   Fontaine, Bruno La ^c   Ma, Andy ^d   Montgomery, Warren ^b   Niakoula, Dimitra ^a   Park, Joo on ^f   Wallow, Tom ^c   Wurm, Stefan ^b  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b SEMATECH   (United States)

^c ADVANCED MICRO DEVICES   (United States)

^d INTEL CORPORATION   (United States)

^e Hyperion Development LLC   (United States)

^f SAMSUNG Electronics   (South Korea)

Author keywords

Extreme ultraviolet; Line edge roughness; Lithography; Photoresist

Indexed keywords

EUV RESISTS; EXPOSURE TOOLS; EXTREME ULTRAVIOLET; HIGH RESOLUTIONS; LINE-EDGE ROUGHNESS; NODE DEVELOPMENT; PROCESS LATITUDES; SEMATECH; TEST RESULTS;

EXPOSURE METERS; LASER PULSES; PHOTORESISTORS; PRINTING; SURFACE TREATMENT;

ULTRAVIOLET DEVICES;

EID: 67349110819     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2009.03.013     Document Type: Article

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