Physics and chemistry of hot-wire chemical vapor deposition from silane: Measuring and modeling the silicon epitaxy deposition rate

Journal of Applied Physics

Volumn 107, Issue 5, 2010, Pages

  Martin, Ina T ^a   Teplin, Charles W ^a   Doyle, James R ^b   Branz, Howard M ^a   Stradins, Paul ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

^b MACALESTER COLLEGE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL DEPOSITION; EPITAXIAL SI; FILM DEPOSITION RATES; FOREIGN SUBSTRATES; GAS PRESSURES; GAS-PHASE MEASUREMENT; GROWTH CONDITIONS; HOT WIRE CHEMICAL VAPOR DEPOSITION; NANOCRYSTALLINES; POLYCRYSTALLINE-SI; SILICON EPITAXY; SILICON PHOTOVOLTAIC; STICKING COEFFICIENTS; SUBSTRATE INTERACTION;

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DEPOSITION; DEPOSITION RATES; EPITAXIAL FILMS; FILAMENTS (LAMP); POLYSILICON; SUBSTRATES; WIRE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77949708371     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3298455     Document Type: Article

References (38)

1. Proceedings of the Fifth International Conference on Hot-Wire Chemical Vapor Deposition (HWCVD, Cat-CVD), Cambridge, MA, 2008 [Thin Solid Films 517, 3413 (2009)].
2. H. Wiesmann, A. K. Ghosh, T. McMahon, and M. Strongin, J. Appl. Phys. 50, 3752 (1979).
3. A. H. Mahan, J. Carapella, B. P. Nelson, R. S. Crandall, and J. Balberg, J. Appl. Phys. 69, 6728 (1991).
4. K. F. Feenstra, R. E. I. Schropp, and W. F. Van der Weg, J. Appl. Phys. 85, 6843 (1999).
5. J. K. Rath, A. J. Hardeman, C. H. M. van der Werf, P. A. T. T. van Veenendaal, M. Y. S. Rusche, and R. E. I. Schropp, Thin Solid Films 430, 67 (2003).
6. B. Schroeder, M. Kupich, P. Kumar, and D. Grunsky, Thin Solid Films 516, 722 (2008).
7. R. E. I. Schropp, Thin Solid Films 451-452, 455 (2004).
8. H. Matsumura, Jpn. J. Appl. Phys., Part 1 37, 3175 (1998).
9. F. Finger, Y. Mai, S. Klein, and R. Carius, Thin Solid Films 516, 728 (2008).
10. J.-E. Bouŕe, S. R. Jadkar, S. Kasouit, and R. Vanderhaghen, Thin Solid Films 501, 133 (2006).
11. J. Thiesen, E. Iwaniczko, K. M. Jones, A. H. Mahan, and R. Crandall, Appl. Phys. Lett. 75, 992 (1999).
12. C. W. Teplin, E. Iwaniczko, B. To, H. Moutinho, P. Stradins, and H. M. Branz, Phys. Rev. B 74, 235428 (2006).
13. Q. Wang, C. W. Teplin, P. Stradins, B. To, K. M. Jones, and H. M. Branz, J. Appl. Phys. 100, 093520 (2006).
14. C. E. Richardson, K. Langeland, and H. A. Atwater, Thin Solid Films 516, 597 (2008).
15. R. B. Bergmann and J. H. Werner, Thin Solid Films 403-404, 162 (2002).
16. C. W. Teplin, D. S. Ginley, and H. M. Branz, J. Non-Cryst. Solids 352, 984 (2006).
17. I. T. Martin, H. M. Branz, P. Stradins, D. L. Young, R. C. Reedy, and C. W. Teplin, Thin Solid Films 517, 3496 (2009).
18. C. H. M. van der Werf, P. A. T. T. Veenendaal, M. K. van Veen, A. J. Hardeman, M. Y. S. Rusche, J. K. Rath, and R. E. I. Schropp, Thin Solid Films 430, 46 (2003).
19. S. Klein, F. Finger, R. Carius, and J. Lossen, Thin Solid Films 501, 43 (2006).
20. N. Tsuji, T. Akiyama, and H. Komiyama, J. Non-Cryst. Solids 198-200, 1054 (1996).
21. S. Klein, F. Finger, and R. Carius, J. Appl. Phys. 98, 024905 (2005).
22. R. Zedlitz, F. Kessler, and M. Heintze, J. Non-Cryst. Solids 164-166, 83 (1993).
23. J. Doyle, R. Robertson, G. H. Lin, M. Z. He, and A. Gallagher, J. Appl. Phys. 64, 3215 (1988).
24. W. Zheng and A. C. Gallager, Thin Solid Films 516, 929 (2008).
25. E. C. Molenbroek, A. H. Mahan, E. J. Johnson, and A. C. Gallagher, J. Appl. Phys. 79, 7278 (1996).
26. C. W. Teplin, D. H. Levi, E. Iwaniczko, K. M. Jones, J. D. Perkins, and H. M. Branz, J. Appl. Phys. 97, 103536 (2005).
27. J. R. Doyle, Y. Xu, R. C. Reedy, H. M. Branz, and A. H. Mahan, Thin Solid Films 516, 526 (2008).
28. A. C. Gallagher, Thin Solid Films 395, 25 (2001).
29. R. Robertson and A. Gallagher, J. Chem. Phys. 85, 3623 (1986).
30. T. J. Donahue and R. Reif, J. Appl. Phys. 57, 2757 (1985).
31. C. W. Teplin, Q. Wang, E. Iwaniczko, K. M. Jones, M. Al-Jassim, R. C. Reedy, and H. M. Branz, J. Cryst. Growth 287, 414 (2006).
32. W. M. M. Kessels, P. R. McCurdy, K. L. Williams, G. R. Barker, V. A. Venturo, and E. R. Fisher, J. Phys. Chem. B 106, 2680 (2002).
33. M. S. Valipa, E. S. Aydil, and D. Maroudas, Surf. Sci. 572, L339 (2004).
34. D. Liu, I. T. Martin, J. Zhou, and E. R. Fisher, Pure Appl. Chem. 78, 1187 (2006).
35. W. M. M. Kessels, J. P. M. Hoefnagels, P. J. van den Oever, Y. Barrell, and M. C. M. van de Sanden, Surf. Sci. 547, L865 (2003).
36. J. P. M. Hoefnagels, A. A. E. Stevens, M. G. H. Boogaarts, W. M. M. Kessels, and M. C. M. van de Sanden, Chem. Phys. Lett. 360, 189 (2002).
37. D.-S. Lin and C. Ru-Ping, Phys. Rev. B 60, R8461 (1999).
38. C. W. Teplin, I. T. Martin, K. M. Jones, D. L. Young, M. J. Romero, R. C. Reedy, H. M. Branz, and P. Stradins, Mater. Res. Soc. Symp. Proc. 1066, A11 (2008).