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Applied Physics Letters

Volumn 75, Issue 7, 1999, Pages 992-994

Growth of epitaxial silicon at low temperatures using hot-wire chemical vapor deposition

(5) Thiesen, J a Iwaniczko, E b Jones, K M b Mahan, A b Crandall, R b

a UCB 450 (United States)

b NATIONAL RENEWABLE ENERGY LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000024521 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.124576 Document Type: Article

Times cited : (58)

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