Characteristics of the hot-wire CVD reactor on a-Si:H deposition

Journal of Non-Crystalline Solids

Volumn 198-200, Issue PART 2, 1996, Pages 1054-1057

  Tsuji, Naoto ^a   Akiyama, Tomoo ^a   Komiyama, Hiroshi ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CALCULATIONS; CHEMICAL REACTORS; CHEMICAL VAPOR DEPOSITION; DIFFUSION; DISSOCIATION; ELECTRIC WIRE; FILM PREPARATION; MATHEMATICAL MODELS; SILANES; SURFACE PROPERTIES; TUNGSTEN;

DEPOSITION RATES; HOT WIRE ASSISTED CHEMICAL VAPOR DEPOSITION; HOT WIRE SURFACE; SILANE DEPLETION; SILANE DIFFUSION; TOTAL GAS FLOW RATE;

AMORPHOUS FILMS;

EID: 0030563361     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-3093(96)00040-3     Document Type: Article

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