Film stoichiometry and gas dissociation kinetics in hot-wire chemical vapor deposition of a-SiGe:H

Thin Solid Films

Volumn 516, Issue 5, 2008, Pages 526-528

  Doyle, James R ^a   Xu, Yueqin ^a   Reedy, Robert ^a   Branz, Howard M ^a   Harv Mahan, A ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

Amorphous silicon germanium alloys; Hot wire deposition

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DISSOCIATION; PRESSURE EFFECTS; REACTION KINETICS; STOICHIOMETRY;

AMORPHOUS SILICON GERMANIUM ALLOYS; DISSOCIATION RATES; GAS DISSOCIATION KINETICS; HOT-WIRE DEPOSITION;

THIN FILMS;

EID: 36749026213     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.06.189     Document Type: Article

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