Doping of high-quality epitaxial silicon grown by hot-wire chemical vapor deposition near 700 °C

Thin Solid Films

Volumn 517, Issue 12, 2009, Pages 3496-3498

  Martin, Ina T ^a   Branz, Howard M ^a   Stradins, Paul ^a   Young, David L ^a   Reedy, Robert C ^a   Teplin, Charles W ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

Doping; Epitaxy; Hall; Hot wire; Mobility; Photovoltaics; Silicon; SIMS

Indexed keywords

DOPING; EPITAXY; HALL; HOT-WIRE; MOBILITY; PHOTOVOLTAICS; SIMS;

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; CRYSTAL IMPURITIES; DOPING (ADDITIVES); ELECTRON MOBILITY; EPITAXIAL FILMS; EPITAXIAL LAYERS; FILMS; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; PHOSPHORUS; PHOTOVOLTAIC EFFECTS; SECONDARY ION MASS SPECTROMETRY; SILICON WAFERS; VAPORS; WIRE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 64349114473     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.059     Document Type: Article

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