Quality and growth rate of hot-wire chemical vapor deposition epitaxial Si layers

Materials Research Society Symposium Proceedings

Volumn 1066, Issue , 2008, Pages 285-289

  Teplin, Charles W ^a   Martin, Ina T ^a   Jones, Kim M ^a   Young, David ^a   Romero, Manuel J ^a   Reedy, Robert C ^a   Branz, Howard M ^a   Stradins, Paul ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; THIN FILMS;

DEFECT CONCENTRATIONS; EPITAXIAL SI; FAST EPITAXIAL GROWTHS; GROWTH CHEMISTRY; HIGH CARRIER MOBILITY; HOT WIRE CHEMICAL VAPOR DEPOSITION; HOT WIRE CVD; SUBSTRATE TEMPERATURE;

GROWTH RATE;

EID: 63049103075     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1066-a11-06     Document Type: Conference Paper

References (7)

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3. C. W. Teplin, H. M. Branz, K. M. Jones, M. J. Romero, P. Stradins and S. Gall, Mat. Res. Soc. Symp. Proc. 989 (2007) 133.
4. C. W. Teplin, E. Iwaniczko, B. To, H. Moutinho, P. Stradins and H. M. Branz, Physical Review B 74 (2006) 5.
5. U. of Delaware - IGERT, http://www.udel.edu/igert/pvcdrom/APPEND/SILlCON. HTM.
6. D. Lin and C. R., Physical Review B 60 (1999) R8461.
7. W. Zheng and A. Gallagher, Thin Solid Films 516 (2008) 929.