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Journal of Crystal Growth

Volumn 287, Issue 2, 2006, Pages 414-418

Low-temperature silicon homoepitaxy by hot-wire chemical vapor deposition with a Ta filament

(7) Teplin, Charles W a Wang, Qi a Iwaniczko, Eugene a Jones, Kim M a Al Jassim, Mowafak a Reedy, Robert C a Branz, Howard M a

a NATIONAL RENEWABLE ENERGY LABORATORY (United States)

Author keywords

A3. Epitaxy; A3. Hot wire chemical vapor deposition; A3. Thin film; B1. Silicon; B3. Solar cell

Indexed keywords

CRYSTAL ORIENTATION; EPITAXIAL GROWTH; SILICON; SILICON WAFERS; SOLAR CELLS; SUBSTRATES; THIN FILMS;

HOT-WIRE CHEMICAL VAPOR DEPOSITION; LOW-TEMPERATURE SILICON HOMOEPITAXY; TANTALUM FILAMENT; THICKEST EPITAXIAL LAYERS;

CHEMICAL VAPOR DEPOSITION;

EID: 30344473307 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.11.055 Document Type: Conference Paper

Times cited : (27)

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